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2. 在栅极与源极之间施加正极性电压（栅极-源极电压：V
GS
）
3. 因此，电子被吸引至栅极绝缘膜下的P层，P层变为N层（变成N层的P层被称为“ 反转层”）
4. 由于上述第3条中所述的反转现象，MOSFET的所有区域变成N层（从漏极侧：“N+”-”N-”-” 反转层（N）”–“N+”）
5. 因此，MOSFET用作电阻器，漏极电流由施加的VDS和负载流决定。
