字級大小SCRIPT，如您的瀏覽器不支援，IE6請利用鍵盤按住ALT鍵 + V → X → (G)最大(L)較大(M)中(S)較小(A)小，來選擇適合您的文字大小，如為IE7或Firefoxy瀏覽器則可利用鍵盤 Ctrl + (+)放大 (-)縮小來改變字型大小。 Competition between neighboring electrons is a rather complex phenomenon in strongly correlated systems. Charge density waves (CDW), caused by strong electron-phonon coupling and charge modulation, will generate new periods and form an energy gap near the Fermi level. In order to understand comprehensively how charge density wave gives rise to new periodic lattices through charge modulation, investigation in different molecular symmetries structures will give the physics a better observation of the electronic properties and interaction between charge density waves and molecules at the interface.
We demonstrate an in-situ growth of iron (II) phthalocyanine (FePc) molecules on 2H-NbSe2 by thermal evaporation, we gradually increase the coverage and discover that FePc molecules will change their arrangement due to the influence of charge density waves under different coverages through scanning tunneling microscope. By conducting further electrical analysis for various structures, we try to clarify the physical mechanism and the complex interaction between the FePc molecules and charge density waves. With this investigation, we provide a more comprehensive perspective on the study of the mechanism for CDW pinning absorbed at the interface.
摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 ix
第一章 緒論 1
1.1 過渡金屬二硫族化合物(Transition Metal Dichalcogenides, TMDs) 1
1.1.1 二硒化鈮(Niobium Diselenide, NbSe2) 3
1.2 金屬酞菁(Metal phthalocyanine, Mpc) 3
1.2.1鐵( II )酞菁(Iron(II) phthalocyanine, FePc) 4
1.3 超導(Superconductivity) 5
1.4 近藤效應(Kondo effect) 6
1.5 電荷密度波(Charge density wave,CDW) 7
1.6 研究動機(Motivation) 8
1.7 文獻回顧 9
1.7.1 鐵( II )酞菁(Iron(II) phthalocyanine, FePc)成長於單晶金(111) 9
1.7.2 錳酞菁(manganese phthalocyanine, MnPc)成長於二硒化鈮 11
1.7.3 二硒化鈮(Niobium Diselenide, NbSe2)之電荷密度波特性 12
第二章 實驗原理 14
2.1 掃描穿隧顯微鏡原理(Principle of STM) 14
2.1.1 量子穿隧效應(Quantum tunneling effect) 14
2.1.2巴丁穿隧理論(Bardeen’s tunneling theory) 16
2.1.3 掃描模式(Scanning mode) 17
2.2 掃描穿隧能譜(Scanning Tunneling Spectroscopy) 19
第三章 實驗儀器 21
3.1 真空系統(Vacuum System) 21
3.1.1 真空概念(Introduction of Vacuum) 21
3.1.2 超高真空系統(High vacuum system) 22
3.1.3真空抽氣系統(Pumping system) 23
3.1.3真空壓力量測計(Pressure measurement tool ) 26
3.2 離子槍系統(Ion sputtering system) 28
3.3 蒸鍍系統 (Evaporator system) 28
3.3.1薄膜成長機制(Thin film mechanism) 29
3.4 低溫超高真空磁場穿隧顯微鏡(LT UHV Magnetic Scanning Tunneling Microscopy) 31
3.4.1儀器構造(Instrument construction) 31
3.4.2 儀器型號：Unisoku 1300 (Instrument brand) 34
第四章 實驗方法 37
4.1 探針製備 37
4.2 樣品製備 38
第五章 結果與討論 39
5.1 77 K鐵( II )酞菁分子於單晶金(111)成長模式 39
5.2 2H-二硒化鈮(NbSe2)不同溫度之表面樣貌 41
5.3 鐵( II )酞菁分子於2H-NbSe2 (Bulk) 受電荷密度波影響之自我組裝行為 45
5.4 2H-NbSe2 (Bulk)不同溫度之電子能態特性 50
5.5 鐵( II )酞菁分子於2H-NbSe2 (Bulk)電荷密度波鄰近效應 52
第六章 結論 55
參考文獻 56
附錄 58
參考文獻
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