邹芹, 孙俊绒, 李艳国, 罗永安. TiN0.3/AlN复合烧结界面扩散现象[J]. 金刚石与磨料磨具工程, 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 引用本文: 邹芹, 孙俊绒, 李艳国, 罗永安. TiN _0.3 /AlN复合烧结界面扩散现象[J]. 金刚石与磨料磨具工程, 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 ZOU Qin, SUN Junrong, LI Yanguo, LUO Yong`an. Interfacial diffusion in TiN0.3/AlN composite[J]. Diamond & Abrasives Engineering, 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 Citation: ZOU Qin, SUN Junrong, LI Yanguo, LUO Yong`an. Interfacial diffusion in TiN _0.3 /AlN composite[J]. Diamond & Abrasives Engineering , 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 邹芹, 孙俊绒, 李艳国, 罗永安. TiN0.3/AlN复合烧结界面扩散现象[J]. 金刚石与磨料磨具工程, 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 引用本文: 邹芹, 孙俊绒, 李艳国, 罗永安. TiN _0.3 /AlN复合烧结界面扩散现象[J]. 金刚石与磨料磨具工程, 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 ZOU Qin, SUN Junrong, LI Yanguo, LUO Yong`an. Interfacial diffusion in TiN0.3/AlN composite[J]. Diamond & Abrasives Engineering, 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 Citation: ZOU Qin, SUN Junrong, LI Yanguo, LUO Yong`an. Interfacial diffusion in TiN _0.3 /AlN composite[J]. Diamond & Abrasives Engineering , 2023, 43(5): 537-545. doi: 10.13394/j.cnki.jgszz.2022.0222 为研究TiN _0.3 /AlN复合烧结体中两相界面区域的N原子的扩散现象，通过机械合金化方法制备出非化学计量比TiN _0.3 ，采用放电等离子体烧结技术分层及复合烧结TiN _0.3 /AlN复合材料，采用金相、XRD、SEM、EDS及TEM等分析表征TiN _0.3 /AlN复合材料的物相组成、元素分布和组织形貌。结果表明： AlN中的N通过空位扩散机制向TiN _0.3 中扩散，其扩散程度逐渐减弱；与AlN接触的TiN _0.3 部分由于吸收了来自AlN中的N使成分接近正常比例的TiN，而远离界面处的部分则接近TiN _0.3 的成分；在两相结合区域有宽度在1 nm以下的非晶层，其电子衍射斑点出现纵向伸长，产生共格，说明六方结构的AlN晶格向TiN晶格畸变，形成面心立方结构的TiN _0.3 /AlN。

TiN/AlN复合材料 /  放电等离子体烧结 /  界面扩散 / Abstract: In recent years, extensive research has been conducted on nano-multilayer films of TiN/AlN system. However, there are few reports on its bulk composites. In this study, non-stoichiometric TiN _0.3 was prepared by mechanical alloying, then TiN _0.3 /AlN composites were fabricated through spark plasma sintering (SPS) utilizing both layered and mixed sintering techniques. The phase composition, element distribution and microstructure of TiN _0.3 /AlN composites were characterized by metallography, XRD, SEM, EDS and TEM, to study the diffusion of N atoms in the interface region of TiN _0.3 /AlN composites. The results show that N in AlN diffuses into TiN _0.3 through a vacancy diffusion mechanism, The area of TiN _0.3 in contact with AlN absorbs N from AlN to make the composition close to the normal proportion of TiN, while the area "far away" from the interface is close to the component of TiN _0.3 , and its diffusion degree weakens gradually. In the two-phase bonding region, there is a thin amorphous layer whose width is less than 1 nm. The electron diffraction pattern elongates longitudinally and produces coherent lattice. The AlN lattice of hexagonal structure is distorted to TiN lattice, forming TiN _0.3 /AlN with a face-centered cubic structure.

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